N-Channel 650V (D-S)Power MOSFET

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VBSEMI

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N-Channel 650 V (D-S) MOSFET

文件：1.08802 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

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N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

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STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08802 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

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N溝道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET，IPAK封裝

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap ? Extremely high dv/dt capability \n? ESD improved capability \n? 100% avalanche tested \n? Gate charge minimized;

ST

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N溝道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET，DPAK封裝

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH? technology by STMicroelectronics, an optimization of the well-established PowerMESH?. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t ? Extremely high dv/dt capability \n? ESD improved capability \n? 100% avalanche tested \n? Gate charge minimized;

ST

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