N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D?PAK, DPAK, TO-220FP and TO-220

Description The devices are N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.25315 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N溝道550 V、0.150 Ohm典型值、16 A MDmesh M5功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio ? Extremely low RDS(on) \n? Low gate charge and input capacitance \n? Excellent switching performance \n? 100% avalanche tested;

ST

意法半導(dǎo)體

N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D?PAK, DPAK, TO-220FP and TO-220

Description The devices are N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.25315 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：310.23 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 550 V, 0.205, 13 A PowerFLAT 8x8 HV MDmesh V Power MOSFET

文件：900.73 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體