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          首頁 >STD18>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STD18

          Thyristor-Diode Modules, Diode-Thyristor Modules

          文件:1.84346 Mbytes 頁數(shù):4 Pages

          SIRECT

          矽萊克半導體

          STD18

          Thyristor-Diode Modules, Diode-Thyristor Modules

          文件:480.11 Kbytes 頁數(shù):4 Pages

          SIRECTIFIER

          矽萊克電子

          STD1802

          isc Silicon NPN Power Transistor

          DESCRIPTION ? Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) ? DC Current Gain -hFE = 100(Min)@ IC= 3A ? Fast -Switching speed ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? CCFL dirvers ? Volt

          文件:229.13 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          STD1802

          LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

          文件:535.73 Kbytes 頁數(shù):7 Pages

          STMICROELECTRONICS

          意法半導體

          STD1802T4

          LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

          文件:535.73 Kbytes 頁數(shù):7 Pages

          STMICROELECTRONICS

          意法半導體

          STD1802T4-A

          Low voltage fast-switching NPN power transistor

          Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Very low collector to emitter satur

          文件:248.84 Kbytes 頁數(shù):10 Pages

          STMICROELECTRONICS

          意法半導體

          STD1805

          LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

          文件:237.56 Kbytes 頁數(shù):8 Pages

          STMICROELECTRONICS

          意法半導體

          STD1805-1

          LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

          文件:237.56 Kbytes 頁數(shù):8 Pages

          STMICROELECTRONICS

          意法半導體

          STD1805T4

          LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

          文件:237.56 Kbytes 頁數(shù):8 Pages

          STMICROELECTRONICS

          意法半導體

          STD1855PL

          P-Channel E nhancement Mode Field Effect Transistor

          FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

          文件:879.01 Kbytes 頁數(shù):8 Pages

          SAMHOP

          三合微科

          技術參數(shù)

          • Package:

            DPAK

          • Grade:

            Industrial

          • Transistor Polarity:

            NPN

          • Collector-Emitter Voltage_max(V):

            60

          • Collector-Base Voltage_max(V):

            80

          • Collector Current_abs_max(A):

            3

          • Dc Current Gain_min:

            100

          • Test Condition for hFE (IC):

            3

          • Test Condition for hFE (VCE)_spec(V):

            2

          • VCE(sat)_max(V):

            0.3

          • Test Condition for VCE(sat) - IC:

            2

          • Test Condition for VCE(sat) - IB_spec(mA):

            100

          供應商型號品牌批號封裝庫存備注價格
          AUK
          24+
          162000
          現(xiàn)貨供應
          詢價
          SEMTRON
          25+
          SOT23-5
          1320
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          DISCRETE
          2500
          STM
          557500
          詢價
          ST
          2015+
          TO252D
          12500
          全新原裝,現(xiàn)貨庫存長期供應
          詢價
          ST
          24+
          原廠原封
          6523
          進口原裝公司百分百現(xiàn)貨可出樣品
          詢價
          ST
          25+
          TO252
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          ST
          24+
          TO-252(2引線+接
          3
          原裝現(xiàn)貨假一罰十
          詢價
          AUK
          24+
          TO-92
          5000
          只做原裝公司現(xiàn)貨
          詢價
          ST
          1725+
          ?
          7500
          只做原裝進口,假一罰十
          詢價
          ST
          22+
          TO-252
          5000
          原裝現(xiàn)貨庫存.價格優(yōu)勢
          詢價
          更多STD18供應商 更新時間2026-1-18 16:00:00
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