N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

文件：518.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

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3-phase inverter based on STSPIN32F0251

Features ? Input voltage 什om 20 V to 120 V DC/AC ? STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q ? Overcurrent threshold set to 16 Apeak ? Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 ? Single-shunt current sensing, suitable for: - Sensor

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STMICROELECTRONICS

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N溝道250 V - 0.14 Ohm - 17 A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

意法半導(dǎo)體

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

文件：518.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

文件：518.46 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) -RDS(on) = 0.165Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.3 Kbytes 頁數(shù)：2 Pages

ISC

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