| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD17NF03 | N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET??POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：264.41 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STD17NF03 | N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET? POWER MOSFET | ST 意法半導(dǎo)體 | ST | |
N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET??POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：264.41 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：413.42 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：413.42 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema 文件：413.42 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 30V - 0.038ohm - 17A - DPAK/IPAK STripFET TM II Power MOSFET 文件：312.03 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 30-V (D-S) MOSFET 文件：1.68819 Mbytes 頁(yè)數(shù)：8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel MOSFET uses advanced trench technology 文件：988.19 Kbytes 頁(yè)數(shù)：4 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-channel 30V - 0.038ohm - 17A - DPAK/IPAK STripFET TM II Power MOSFET 文件：312.03 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package：
IPAK
- Grade：
Industrial
- VDSS(V)：
30
- RDS(on)_max(@ 4.5/5V)(Ω)：
0.06
- RDS(on)_max(@ VGS=10V)(Ω)：
0.05
- Drain Current (Dc)_max(A)：
17
- PTOT_max(W)：
30
- Qg_typ(nC)：
4.8
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-252 |
885 |
詢價(jià) | |||
CET/華瑞 |
23+ |
TO-263 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
ST |
25+ |
TO-252/D-PAK |
32500 |
普通 |
詢價(jià) | ||
ST/意法 |
2022+ |
TO-252 |
20000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
ST |
25+ |
TO-252 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
詢價(jià) | ||
ST/意法 |
22+ |
TO-252 |
17800 |
原裝正品 |
詢價(jià) | ||
ST/意法 |
20+ |
TO-252 |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
ST |
TO-252 |
23+ |
10000 |
終端免費(fèi)提供樣品 可開13%增值稅發(fā)票 |
詢價(jià) | ||
ST |
NEW |
TO-252 |
8795 |
代理全系列銷售, 全新原裝正品,價(jià)格優(yōu)勢(shì),長(zhǎng)期供應(yīng),量大可訂 |
詢價(jià) | ||
ST |
25+ |
TO251 |
130 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
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