N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.37238 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

文件：308.12 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D?PAK, DPAK

文件：1.37238 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

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N溝道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio ? Extremely low RDS(on) \n? Low gate charge and input capacitance \n? Excellent switching performance \n? 100% avalanche tested;

ST

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