N - CHANNEL 100V - 0.07ohm - 16A - IPAK/DPAK STripFET MOSFET

DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable m

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STMICROELECTRONICS

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N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

文件：444.51 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

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N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

文件：444.51 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

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N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：442.05 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

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N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：442.05 Kbytes 頁數(shù)：11 Pages

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N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

文件：462.68 Kbytes 頁數(shù)：16 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.71 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes 頁數(shù)：4 Pages

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矽萊克電子

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：484.16 Kbytes 頁數(shù)：4 Pages

SIRECTIFIER

矽萊克電子

Thyristor-Diode Modules

文件：368.48 Kbytes 頁數(shù)：4 Pages

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矽萊克電子