N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：412.15 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON)

文件：1.40701 Mbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on)

文件：917.25 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

N-Channel MOSFET uses advanced trench technology

文件：1.56275 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on)

文件：917.25 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON)

文件：1.40701 Mbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：412.15 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Isc N-Channel MOSFET Transistor

文件：320.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N溝道100 V、0.06 Ohm典型值、23 A STripFET II功率MOSFET，DPAK封裝

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET? process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Low gate charge;

ST

意法半導(dǎo)體