Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastre

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STMICROELECTRONICS

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汽車級N溝道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封裝

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif ? AEC-Q101 qualified \n? Fast-recovery body diode \n? Extremely low gate charge and input capacitance \n? Low on-resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

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Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：AUTOMOTIVE-GRADE N-CHANNEL 600 V

STMICROELECTRONICS

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Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package

Features ? AEC-Q101 qualified ? Fast-recovery body diode ? Extremely low gate charge and input capacitance ? Low on-resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastre

文件：422.14 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體