N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CH

文件：176.25 Kbytes 頁數：10 Pages

STMICROELECTRONICS

意法半導體

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE ■ APPLIC

文件：180.64 Kbytes 頁數：10 Pages

STMICROELECTRONICS

意法半導體

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes 頁數：12 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes 頁數：12 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.64 Kbytes 頁數：2 Pages

ISC

無錫固電