絲?。?a target="_blank" title="Marking" href="/ipak/marking.html">IPAK；Package：TO-251；isc N-Channel Mosfet Transistor

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N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：324.69 Kbytes 頁數(shù)：2 Pages

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N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes 頁數(shù)：19 Pages

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N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes 頁數(shù)：19 Pages

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N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package

This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hi 100% avalanche tested\nLow gate input resistancel\nLow input capacitance and gate charge;

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N溝道600 V、0.37 Ohm典型值、10 A FDmesh II功率MOSFET，DPAK封裝

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. ? Fast-recovery body diode \n? Low gate charge and input capacitance \n? Low on-resistance RDS(on) \n? 100% avalanche tested \n? High dv/dt ruggedness;

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