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          首頁 >STD11>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          STD11NM60N

          N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

          Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

          文件:470.38 Kbytes 頁數(shù):17 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM60N-1

          N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

          Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

          文件:470.38 Kbytes 頁數(shù):17 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM60N-1

          N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

          Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

          文件:489.4 Kbytes 頁數(shù):18 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM60N-1

          N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

          Description This series of devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

          文件:641.21 Kbytes 頁數(shù):20 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM60ND

          N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

          Description The device is an N-channel FDmesh? II Power MOSFET that belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

          文件:530.46 Kbytes 頁數(shù):18 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM65N

          N-channel 650 V, 0.425 廓 typ., 11 A MDmesh??I Power MOSFET in DPAK, TO-220FP, I?PAKFP and TO-220 packages

          Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

          文件:1.26375 Mbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導體

          STD11NM65N

          N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

          Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

          文件:1.26375 Mbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導體

          STD110N02R

          Power MOSFET

          文件:102.59 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導體

          STD110N02RT4G

          Power MOSFET

          文件:102.59 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導體

          STD110N8F6

          Very low gate charge

          文件:632.6 Kbytes 頁數(shù):16 Pages

          STMICROELECTRONICS

          意法半導體

          技術(shù)參數(shù)

          • Package:

            DPAK

          • Grade:

            Industrial

          • VDSS(V):

            650

          • RDS(on)_max(@ VGS=10V)(Ω):

            0.68

          • Drain Current (Dc)_max(A):

            7

          • PTOT_max(W):

            85

          • Qg_typ(nC):

            12.5

          供應商型號品牌批號封裝庫存備注價格
          ST
          23+
          TO252
          6996
          只做原裝正品現(xiàn)貨
          詢價
          STM
          20+
          5000
          TO-252-3 (DPAK)
          詢價
          ST/意法半導體
          22+
          TO-252-3
          6007
          原裝正品現(xiàn)貨 可開增值稅發(fā)票
          詢價
          ST
          24+
          TO-252
          40000
          只做原裝 有掛有貨 假一賠十
          詢價
          ST(意法半導體)
          25+
          N/A
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          STMicroelectronics
          21+
          DPAK
          2500
          100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
          詢價
          ST(意法半導體)
          2447
          TO-252-3(DPAK)
          105000
          2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
          詢價
          STM
          25+
          TO-252
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          ST(意法)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
          詢價
          22+
          NA
          3000
          加我QQ或微信咨詢更多詳細信息,
          詢價
          更多STD11供應商 更新時間2026-1-18 14:23:00
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