絲?。?strong>STC；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 1120~1600 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One Unidirectional I/O Line Low clamping voltage Working voltages: 3.0V,15V, 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 80A,40A,16A (

文件：4.09787 Mbytes 頁(yè)數(shù)：5 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>STC；Package：SMA；TVS Diodes Surface Mount > 400W > SZ1SMA Series

文件：794.06 Kbytes 頁(yè)數(shù)：7 Pages

LITTELFUSE

力特

絲?。?a target="_blank" title="Marking" href="/stc128/marking.html">STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：STC128；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

文件：1.43247 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/c05ie150hv/marking.html">C05IE150HV；Package：TO247-4LHV；Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm

Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Features ■ High voltage / high current Cascode configuration ■ Low equi

文件：118.97 Kbytes 頁(yè)數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c08de150hp/marking.html">C08DE150HP；Package：TO247-4L；Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm

Description The STC08DE150HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150HP is designed for use in aux flyback smps for any three phase application. Gener

文件：297.88 Kbytes 頁(yè)數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 ohm

DESCRIPTION The STC03DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE150 is designed for use in aux flyback smps for any three phase application. General Fe

文件：327.41 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm

DESCRIPTION The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application. General Fe

文件：329.01 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM

Description The STC03DE170HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HP is designed for use in aux flyback smps for any three phase application.

文件：313.51 Kbytes 頁(yè)數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM

Description The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HV is designed for use in aux flyback smps for any three phase application. Featur

文件：288.04 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體