N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage technology, SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional a

文件：61.53 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

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N-Channel 650V (D-S)Power MOSFET

文件：1.10785 Mbytes 頁數(shù)：10 Pages

VBSEMI

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N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

ST

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N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter

文件：391.41 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

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N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：73.67 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.65 Kbytes 頁數(shù)：2 Pages

ISC

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