N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：93.2 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

ST

意法半導體

N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：108.1 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.9 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 650 V (D-S) MOSFET

文件：1.09028 Mbytes 頁數(shù)：9 Pages

VBSEMI

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