N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：418.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH?III MOSFET

ST

意法半導體

N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by

文件：418.81 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH??II MOSFET

DESCRIPTION The third generation of MESH OVERLAY? Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：335.28 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導體

N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?III MOSFET

ST

意法半導體