絲?。?a target="_blank" title="Marking" href="/stac4932/marking.html">STAC4932；Package：STAC780-4B；HF/VHF/UHF RF power N-channel MOSFET

Features ? Excellent thermal stability ? Common source push-pull configuration ? POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz ? Pulse conditions: 1ms, 10 ? In compliance with the 2002/95/EC European directive ? ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 頁數(shù)：13 Pages

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Excellent thermal stability

文件：508.8 Kbytes 頁數(shù)：13 Pages

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HF/VHF/UHF RF power N-channel MOSFET

Features ? Excellent thermal stability ? Common source push-pull configuration ? POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz ? Pulse conditions: 1ms, 10 ? In compliance with the 2002/95/EC European directive ? ST air-cavity STAC package technology Description The STAC49

文件：299.9 Kbytes 頁數(shù)：13 Pages

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1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC? pack ? Excellent thermal stability\n? Common source push-pull configuration\n? POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz? Pulse conditions: 1 msec - 10%\n? In compliance with the 2002/95/EC European directive\n? ST air-cavity STAC? packaging technology;

ST

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Package：STAC244B；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANSISTOR RF MOSF N-CH STAC244B

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