絲?。?strong>ST9；Package：SOT-23-6L；30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON) , VGS@-10V, [email protected]

文件：346.85 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

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絲印：ST9；Package：SOT-23-6L；30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON) , VGS@-10V, [email protected]

文件：346.85 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲?。?strong>ST9；Package：SOT-23-6L；30V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@-10V, [email protected]

文件：345.01 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

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絲?。?a target="_blank" title="Marking" href="/901t/marking.html">901T；Package：TO-220；HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR

n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS n HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES DESCRIPTION The ST901T is a High Voltage NPN silicon transistor in monolithi

文件：109.67 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

文件：61.82 Kbytes 頁(yè)數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：146.21 Kbytes 頁(yè)數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

文件：247.9 Kbytes 頁(yè)數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

SuperTan? Wet Tantalum Capacitors With Hermetic Seal

FEATURES ? Very high capacitance ? 10 μF to 2200 μF ? 25 VDC to 125 VDC ? Very low ESR ? High ripple current ? All tantalum case ? Hermetically sealed ? Low DCL ? Axial through-hole terminations: standard tin / lead (Sn / Pb), 100 % tin (RoHS-compliant) available ? Material categori

文件：116.95 Kbytes 頁(yè)數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SuperTan? Wet Tantalum Capacitors With Hermetic Seal

FEATURES ? Very high capacitance ? 10 μF to 2200 μF ? 25 VDC to 125 VDC ? Very low ESR ? High ripple current ? All tantalum case ? Hermetically sealed ? Low DCL ? Axial through-hole terminations: standard tin / lead (Sn / Pb), 100 tin (RoHS-compliant) available ? Material categorizatio

文件：116.95 Kbytes 頁(yè)數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended.

文件：242.9 Kbytes 頁(yè)數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體