絲印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON) , VGS@10V, [email protected]

文件：385.15 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲印：ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON) , VGS@10V, [email protected]

文件：385.15 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?strong>ST6；Package：SOT-23-6L；30V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V, [email protected]

文件：444.52 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲印：600K；Package：SOT-32；LOW VOLTAGE NPN POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCH

文件：56.67 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

CE conformity

FEATURES J J I4 ? CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b

文件：598.09 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

ST portfolio for smartphone platforms

TYPICAL APPLICATIONS ? Contactless test factory automation and after sales services ? Life proof hole-less personal devices ? Contactless accessories ? Contactless personal equipment docking hub and data transfer KEY FEATURE ? True 10-finger multi touch ? High SNR, hign noise immunity ?

文件：3.51257 Mbytes 頁數(shù)：32 Pages

STMICROELECTRONICS

意法半導(dǎo)體

LOW VOLTAGE PNP POWER TRANSISTOR

Description The ST631K is manufactured by low voltage Epitaxial Base technology and it is housed in SOT-32 plastic package. The complementary PNP type is ST600K. Features ■ LOW SATURATION VOLTAGE Applications ■ SCANNING VELOCITY MODULATION IN CRT DISPLAYS ■ MEDIUM POWER LINEAR AND SWITCHING

文件：56.11 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass passivated die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 400 A Surge Rating ● Available as common anode, common cathode, or doubleer

文件：161.35 Kbytes 頁數(shù)：3 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

Features ? 150 'C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technol

文件：366.58 Kbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technolo

文件：567.89 Kbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子