NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ●

文件：208.41 Kbytes 頁(yè)數(shù)：3 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features ? Low collector-emitter saturation voltage VCE(sat) ? Satisfactory operation performances at high efficiency with the low-voltage power supply.

文件：88.09 Kbytes 頁(yè)數(shù)：3 Pages

PANASONIC

松下

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.75 W (Tamb = 25°C) Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V

文件：181.37 Kbytes 頁(yè)數(shù)：1 Pages

WINGS

永盛電子

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features ? Low collector-emitter saturation voltage VCE(sat) ? Satisfactory operation performances at high efficiency with the low-voltage power supply.

文件：39.29 Kbytes 頁(yè)數(shù)：2 Pages

PANASONIC

松下