N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：150.22 Kbytes 頁數(shù)：8 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET 3.5A

DESCRIPTION\nThe ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicati

Stanson

司坦森

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter

文件：493.29 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel 30-V (D-S) MOSFET

文件：1.025589 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N Channel Enhancement Mode MOSFET

文件：623.39 Kbytes 頁數(shù)：6 Pages

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