HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ? DC curr

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STMICROELECTRONICS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

? FULLY CHARACTERIZED AT 125 °C\n? VERY HIGH SWITCHING SPEED\n? IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE\n? NPN TRANSISTOR? HIGH VOLTAGE CAPABILITY\n? MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION\n? LARGE RBSOA\n? LOW ;

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Package：TO-220-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 400V 8A TO220

STMICROELECTRONICS

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：215.66 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

文件：222.57 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：68.05 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：75.47 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

文件：75.47 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

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高壓快速切換NPN功率晶體管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. \n\n It uses a Cellular Emitter structure to enhance switching speeds. ? FULLY CHARACTERIZED AT 125 °C \n? VERY HIGH SWITCHING SPEED \n? IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE \n? INTEGRATED FREE-WHEELING DIODE \n? HIGH VOLTAGE CAPABILITY \n? MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ;

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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

? FULLY CHARACTERIZED AT 125 °C\n? VERY HIGH SWITCHING SPEED\n? FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING\n? IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTERSTORAGE TIME RANGE \n? INTEGRATED FREE-WHEELING DIODE? HIGH VOLTAGE CAPABIL;

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