Tranch MOSFET

ST04N20D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a ? 200V/4.0A, RDS(ON) = 400m\n? Super high density cell design for extremely low RDS(ON)\n? TO-252 package design;

Stanson

司坦森

TO-252 package design

文件：862.03 Kbytes 頁(yè)數(shù)：7 Pages

STANSON

司坦森

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：131.1 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

N-Channel MOSFET uses advanced trench technology

文件：1.42446 Mbytes 頁(yè)數(shù)：5 Pages

DOINGTER

杜因特

Super high dense cell design for low RDS(ON).

文件：147.86 Kbytes 頁(yè)數(shù)：10 Pages

SAMHOP

三合微科