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          首頁 >SSU>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SSU

          Box Cover Units for Plug Fuses

          Box Cover Units For Plug Fuses Plug fuse box cover units provide a simple, inexpensive way to protect small motors with Edison-type “T”, “TL”, “TC”, “P” and “W” plug fuses. Box cover units are easily installed in standard electrical boxes. By using fuses sized at the amp rating of a motor or slig

          文件:143.58 Kbytes 頁數(shù):2 Pages

          COOPER

          SSU

          H=1.2mm Slide Switches

          文件:280.25 Kbytes 頁數(shù):2 Pages

          MITSUMI

          三美

          SSU1N50A

          N-CHANNEL POWER MOSFET

          FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 500V ■ Lower RDS(ON) : 4.046 Ω(Typ.)

          文件:265.7 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSU1N50B

          520V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

          文件:634.92 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSU1N60B

          600V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:637.03 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSU2N60A

          Advanced Power MOSFET

          Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

          文件:267.86 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSU2N60B

          600V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:644.85 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSU4N60B

          600V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:637.87 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          SSURHD8560T4G-VF01

          絲?。?a target="_blank" title="Marking" href="/uh560/marking.html">UH560;Package:DPAK;600 V, 5 A Power Rectifier

          Features and Benefits ? Ultrafast 30 Nanosecond Recovery Times ? 175°C Operating Junction Temperature ? High Temperature Glass Passivated Junction ? High Voltage Capability to 600 Volts ? SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirement

          文件:217.74 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          SSURHD8560W1T4G

          絲?。?a target="_blank" title="Marking" href="/560w1/marking.html">560W1;Package:DPAK;600 V, 5 A Power Rectifier

          Features and Benefits ? Ultrafast 30 Nanosecond Recovery Times ? 175°C Operating Junction Temperature ? High Temperature Glass Passivated Junction ? High Voltage Capability to 600 Volts ? SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirement

          文件:217.74 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            SSU

          • 制造商:

            Eaton - Bussmann Electrical Division

          • 類別:

            電路保護(hù) > 配件

          • 系列:

            SSU

          • 包裝:

            散裝

          • 配件類型:

          • 配套使用/相關(guān)產(chǎn)品:

            螺口燈座插頭保險(xiǎn)絲

          • 描述:

            FUSE TRON BOX COVER UNIT

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          Eaton
          22+
          NA
          168
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價(jià)
          SAM
          12+
          TO-251
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          FSC
          05+
          原廠原裝
          3051
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          FSC
          24+
          TO-251
          10230
          詢價(jià)
          FSC
          25+
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          3822
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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          FSC
          17+
          TO-251
          6200
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          FSC
          23+
          TO-251
          20000
          原裝正品,假一罰十
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          FSC
          2015+
          SOP/DIP
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
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          仙童
          24+
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          5000
          只做原裝公司現(xiàn)貨
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          FSC
          22+
          TO-251
          5000
          原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
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          更多SSU供應(yīng)商 更新時(shí)間2026-1-20 10:09:00
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