首頁(yè) >SST28VF040A>規(guī)格書列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST | ||
4 Mbit (512K x8) SuperFlash EEPROM PRODUCT DESCRIPTION The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability 文件：323.43 Kbytes 頁(yè)數(shù)：24 Pages | SST Silicon Storage Technology, Inc | SST |
詳細(xì)參數(shù)
- 型號(hào)：
SST28VF040A
- 制造商：
SST
- 制造商全稱：
Silicon Storage Technology, Inc
- 功能描述：
4 Mbit(512K x8) SuperFlash EEPROM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SST |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
SST |
20+ |
TSOP32 |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
詢價(jià) | ||
SST |
22+ |
TSOP32 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
SST |
23+ |
PLCC |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
SST |
114 |
PLCC32 |
1654 |
全新原裝絕對(duì)自己公司現(xiàn)貨特價(jià)! |
詢價(jià) | ||
24+ |
10 |
真實(shí)現(xiàn)貨庫(kù)存 |
詢價(jià) | ||||
SST |
16+ |
PLCC |
8800 |
進(jìn)口原裝大量現(xiàn)貨熱賣中 |
詢價(jià) | ||
SST |
17+ |
PLCC |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
SST |
25+ |
PLCC |
10 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
SST |
24+ |
PLCC |
6000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
更多- SST28VF040A-120-4C-EH
- SST28VF040A-120-4C-PH
- SST28VF040A-150-4C-EH
- SST28VF040A-150-4C-NH
- SST28VF040A-150-4C-PH
- SST28VF040A-150-4I-EH
- SST28VF040A-150-4I-PH
- SST28VF040A-200
- SST28VF040A-200-4C-EHE
- SST28VF040A-200-4C-NHE
- SST28VF040A-200-4C-WH
- SST28VF040A-200-4I-EH
- SST28VF040A-200-4I-PH
- SST28VF040A-90-4C-EH
- SST2907AT116
- SST29EE010
- SST29EE010_04
- SST29EE010-120-3C-E
- SST29EE010-120-3C-N
- SST29EE010-120-3C-P
- SST29EE010-120-3C-U
- SST29EE010-120-4C-EH
- SST29EE010-120-4CNH
- SST29EE010-120-4C-P
- SST29EE010-120-4C-PH
- SST29EE010-120-4C-UH
- SST29EE010-150-4C-P
- SST29EE010-150-4C-U
- SST29EE010-150-4C-W
- SST29EE010-150-4I-E
- SST29EE010-150-4I-N
- SST29EE010-200-3C-N
- SST29EE010-200-3C-P
- SST29EE010-200-3C-U
- SST29EE010-200-3C-W
- SST29EE010-200-3I-E
- SST29EE010-200-3I-N
- SST29EE010-200-3I-PH
- SST29EE010-200-3I-UH
- SST29EE010-200-3I-WH
- SST29EE010-200-4C-EH
- SST29EE010-200-4C-NH
- SST29EE010-200-4C-PH
- SST29EE010-200-4C-UH
- SST29EE010-200-4C-WH
相關(guān)庫(kù)存
更多- SST28VF040A-120-4C-NH
- SST28VF040A-150
- SST28VF040A-150-4C-EHE
- SST28VF040A-150-4C-NHE
- SST28VF040A-150-4C-WH
- SST28VF040A-150-4I-NH
- SST28VF040A-150-4I-WH
- SST28VF040A-200-4C-EH
- SST28VF040A-200-4C-NH
- SST28VF040A-200-4C-PH
- SST28VF040A2004IEH
- SST28VF040A-200-4I-NH
- SST28VF040A-200-4I-WH
- SST2907A
- SST2907A-T116
- SST29EE010_00
- SST29EE010_05
- SST29EE010-120-3C-EH
- SST29EE010-120-3C-NH
- SST29EE010-120-3C-PH
- SST29EE010-120-4C-E
- SST29EE010-120-4C-N
- SST29EE010-120-4C-NH
- SST29EE010-120-4CPH
- SST29EE010-120-4C-U
- SST29EE010-150-4C-NH
- SST29EE010-150-4C-PH
- SST29EE010-150-4C-UH
- SST29EE010-150-4C-WH
- SST29EE010-150-4I-EH
- SST29EE010-150-4I-NH
- SST29EE010-200-3C-NH
- SST29EE010-200-3C-PH
- SST29EE010-200-3C-UH
- SST29EE010-200-3C-WH
- SST29EE010-200-3I-EH
- SST29EE010-200-3I-P
- SST29EE010-200-3I-U
- SST29EE010-200-3I-W
- SST29EE010-200-4C-E
- SST29EE010-200-4C-N
- SST29EE010-200-4C-P
- SST29EE010-200-4C-U
- SST29EE010-200-4C-W
- SST29EE010-200-4I-E
