PWM applications

DESCRIPTION The SSF2369 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

文件：293.95 Kbytes 頁數(shù)：5 Pages

SILIKRON

新硅能微電子

P-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

文件：471.21 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

PWM applications

Silikron

新硅能微電子

P-Channel 30-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

文件：1.36872 Mbytes 頁數(shù)：7 Pages

TUOFENG

拓鋒半導體

Cost-Optimized, 800-nA, 1.8-V, Rail-to-Rail I/O Operational Amplifier with Zero-Crossover Distortion

文件：1.1372 Mbytes 頁數(shù)：27 Pages

TI

德州儀器

TLVx369 Cost-Optimized, 800-nA, 1.8-V, Rail-to-Rail I/O Operational Amplifier with Zero-Crossover Distortion

1 Features 1? Cost-Optimized Precision Amplifier nanoPower: 800 nA/Ch (Typ) ? Low Offset Voltage: 400 μV (Typ) ? Rail-to-Rail Input and Output ? Zero-Crossover Distortion ? Low Offset Drift: 0.5 μV/°C (Typ) ? Gain-Bandwidth Product: 12 kHz ? Supply Voltage: 1.8 V to 5.5 V ? microSize Pack

文件：945.56 Kbytes 頁數(shù)：31 Pages

TI

德州儀器