| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SSF2300 | 20V N-Channel MOSFET 文件：696.63 Kbytes 頁數(shù)：6 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | |
SSF2300 | The SSF2300 uses advanced trench technology 文件：348.83 Kbytes 頁數(shù)：7 Pages | SILIKRON 新硅能微電子 | SILIKRON | |
SSF2300 | MOSFET | Silikron 新硅能微電子 | Silikron | |
Battery protection DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：407.61 Kbytes 頁數(shù)：7 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
20V N-Channel MOSFET DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：730.28 Kbytes 頁數(shù)：6 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
20V N-Channel MOSFET DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：409.41 Kbytes 頁數(shù)：4 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
Battery protection DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：369.97 Kbytes 頁數(shù)：5 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
Advanced MOSFET process technology Features and Benefits ? Advanced MOSFET process technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description It utilizes the latest 文件：1.17039 Mbytes 頁數(shù)：6 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
Advanced MOSFET process technology Features and Benefits ? Advanced MOSFET process technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description It utilizes the latest 文件：1.16821 Mbytes 頁數(shù)：6 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
20V N-Channel MOSFET 文件：691.08 Kbytes 頁數(shù)：6 Pages | GOOD-ARK 固锝電子 | GOOD-ARK |
技術(shù)參數(shù)
- BW：
30M
- Package：
S3030
- Applications：
For TD-LTE
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SILIKRON |
22+23+ |
SOT-23 |
85192 |
代理假一罰十全新原裝現(xiàn)貨可送貨 |
詢價(jià) | ||
SILIKRON |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
GOOD-ARK/蘇州固锝 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
原裝CJ |
25+ |
SOT-23 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
GOOD-ARK |
2022+ |
SOT-23 |
40000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
SILIKRON |
20+ |
SOT-23 |
9266 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
SILIKRON |
24+ |
SOT-23 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
GOOD-ARK ELECTRONICS |
24+ |
N/A |
324282 |
原裝原裝原裝 |
詢價(jià) | ||
GOOD-ARK/蘇州固锝 |
24+ |
SOT-23 |
60000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
國產(chǎn) |
詢價(jià) |
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