| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
20V N-Channel MOSFET DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：307.54 Kbytes 頁數：4 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) 文件：321 Kbytes 頁數：4 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
Battery protection GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) 文件：375.87 Kbytes 頁數：5 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
Battery protection DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) 文件：303.44 Kbytes 頁數：5 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
20V N-Channel MOSFET DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) 文件：323.65 Kbytes 頁數：4 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter 文件：491.35 Kbytes 頁數：9 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
Battery protection DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) 文件：271.18 Kbytes 頁數：5 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
20V N-Channel MOSFET DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.2A RDS(ON) 文件：313.89 Kbytes 頁數：4 Pages | GOOD-ARK 固锝電子 | GOOD-ARK | ||
Battery protection DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.2A RDS(ON) 文件：271.16 Kbytes 頁數：5 Pages | SILIKRON 新硅能微電子 | SILIKRON | ||
Advanced MOSFET process technology Features and Benefits: ? Advanced MOSFET process technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description: It utilizes the lat 文件：1.35361 Mbytes 頁數：7 Pages | SILIKRON 新硅能微電子 | SILIKRON |
技術參數
- BW：
30M
- Package：
S3030
- Applications：
For TD-LTE
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SILIKRON |
24+ |
SOT23 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
SILKRON |
18+ |
SOT23-6 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
GPPB |
24+ |
SOT23 |
66800 |
原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
SILIKRON |
24+ |
SOT-23 |
98000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
量大可定Silikron |
20+ |
SOT-23 |
49000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VBsemi(臺灣微碧) |
2447 |
SOT23-3 |
105000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
CYNERGY |
25+ |
傳感器 |
396 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
SILIKRON |
24+ |
SOT-23 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
SILIKRON |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SILIKRON |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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