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          首頁(yè) >SR820>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SR8200CT

          SCHOTTKY BARRIER RECTIFLER

          Reverse Voltage - 20 to 200 Volts Forward Current - 8.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ? Metal silicon junction ,majority carrier conduction ? Guardring for overvoltage protection ? Low power loss ,high efficiency

          文件:335.08 Kbytes 頁(yè)數(shù):2 Pages

          GXELECTRONICS

          星合電子

          SR8200CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.44679 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          SR8200CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.42087 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          SR8200CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.40208 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          SR8200CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.47367 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          SR8200E

          8.0 Amp Schottky Barrier Rectifiers

          FEATURES ? Low forward voltage drop ? High current capability ? High reliability ? High surge current capability ? Epitaxial construction

          文件:340.54 Kbytes 頁(yè)數(shù):2 Pages

          SECOS

          喜可士

          SR820CT

          SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 8.0Amperes

          FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ? Metal silicon junction ,majority carrier conduction ? Guard ring for overvoltage protection ? Low power loss ,high efficiency ? High current capability ,Low forward voltage drop ? High surge capability

          文件:335.08 Kbytes 頁(yè)數(shù):2 Pages

          GXELECTRONICS

          星合電子

          SR820CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES ? The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ? Construction utilizes void-free molded plastic technique ? Low reverse leakage ? High forward surge current capability ? High temperature soldering guaranteed: 250 °C,0.25”(6.35mm) from case for

          文件:125.93 Kbytes 頁(yè)數(shù):2 Pages

          CHENDA

          辰達(dá)半導(dǎo)體

          SR820CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.44679 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          SR820CT

          SCHOTTKY BARRIER RECTIFIER

          FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

          文件:1.42087 Mbytes 頁(yè)數(shù):2 Pages

          SAMYANG

          三陽(yáng)電子

          技術(shù)參數(shù)

          • VRM_Max (V):

            20

          • Io_Max(A):

            8

          • IFSM_Max(A):

            150

          • Rated lo(A):

            8

          • VF_Max(V):

            0.55

          • IR@25℃IR(uA):

            0.2

          • IR@100℃IR(uA):

            20

          • Cj(PF):

            380

          • Tj(℃):

            -55~+125

          • Status:

            Active

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          更多SR820供應(yīng)商 更新時(shí)間2026-1-19 10:05:00
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