絲?。?strong>SPA；Package：DO-214AC；Transient Voltage Suppressors

400 W peak pulse power capability with a 10/ 1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant High reliability application and automotive grade AEC-Q101 qualified Features

文件：1.22384 Mbytes 頁數(shù)：4 Pages

LUGUANG

魯光電子

絲?。?strong>SPA；Package：UDFN6B；MOSFETs Silicon P-Channel MOS (U-MOS??

文件：300.99 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

Single In-line Package Switches

Features/Benefits ? Thin Single In-line Packaging saves PCB space ? Retention feature holds part to PCB prior to soldering ? Available in vertical or right angle models ? High pressure contact system does not require tape sealing ? RoHS compliant

文件：196.99 Kbytes 頁數(shù)：2 Pages

CK-COMPONENTS

力特

Single In-line Package Switches

Features/Benefits ? Thin Single In-line Packaging saves PCB space ? Retention feature holds part to PCB prior to soldering ? Available in vertical or right angle models ? High pressure contact system does not require tape sealing ? RoHS compliant

文件：196.99 Kbytes 頁數(shù)：2 Pages

CK-COMPONENTS

力特

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：261.1 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：261.72 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

Power MOSFET

FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC

文件：2.12116 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：308.23 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching application

文件：267.65 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：292.69 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌