Ultra-low Quiescent Current, High Efficiency Boost DC-DC Regulator

DESCRIPTION The SP6649 is an ultra-low quiescent current, high efficiency step-up DC-DC converter ideal for single and dual cell alkaline, or Li-Ion battery applications such as digital still cameras, PDA’s, MP3 players, and other portable devices. The SP6649 combines the high delivery associated

文件：139.95 Kbytes 頁(yè)數(shù)：9 Pages

SIPEX

Ultra-low Quiescent Current, High Efficiency Boost DC-DC Regulator

MaxLinear

邁凌

Ultra-low Quiescent Current, High Efficiency Boost DC-DC Regulator

DESCRIPTION The SP6649 is an ultra-low quiescent current, high efficiency step-up DC-DC converter ideal for single and dual cell alkaline, or Li-Ion battery applications such as digital still cameras, PDA’s, MP3 players, and other portable devices. The SP6649 combines the high delivery associated

文件：139.95 Kbytes 頁(yè)數(shù)：9 Pages

SIPEX

Ultra-low Quiescent Current, High Efficiency Boost DC-DC Regulator

DESCRIPTION The SP6649 is an ultra-low quiescent current, high efficiency step-up DC-DC converter ideal for single and dual cell alkaline, or Li-Ion battery applications such as digital still cameras, PDA’s, MP3 players, and other portable devices. The SP6649 combines the high delivery associated

文件：139.95 Kbytes 頁(yè)數(shù)：9 Pages

SIPEX

Ultra-low Quiescent Current, High Efficiency Boost DC-DC Regulator

DESCRIPTION The SP6649 is an ultra-low quiescent current, high efficiency step-up DC-DC converter ideal for single and dual cell alkaline, or Li-Ion battery applications such as digital still cameras, PDA’s, MP3 players, and other portable devices. The SP6649 combines the high delivery associated

文件：139.95 Kbytes 頁(yè)數(shù)：9 Pages

SIPEX

高性能、低功耗開(kāi)關(guān)電源控制芯片

SP6649HF是一顆電流模式PWM控制芯片，內(nèi)置650V高壓功率MOSFET，應(yīng)用于功率在30W以內(nèi)的方案。SP6649HF在PWM模式下工作于固定開(kāi)關(guān)頻率，這個(gè)頻率是由內(nèi)部精確設(shè)定。在空載或者輕載時(shí)，工作頻率由IC內(nèi)部調(diào)整。芯片可以工作在綠色模式，以此來(lái)減小輕載時(shí)的損耗，提高整機(jī)的工作效率。SP6649HF在啟動(dòng)和工作時(shí)只需要很小的電流，可以在啟動(dòng)電路中使用一個(gè)很大的電阻，以此來(lái)進(jìn)一步減小待機(jī)時(shí)的功耗。芯片內(nèi)置有斜坡補(bǔ)償電路，當(dāng)電路工作于大占空比時(shí)，避免次諧波振蕩的發(fā)生，改善系統(tǒng)的穩(wěn)定性。內(nèi)置有前沿消隱時(shí)（Leading-edge blanking time），消除緩沖網(wǎng)絡(luò)中的二極管反向恢 ? 全電壓范圍（90Vac-265Vac）輸入時(shí)待機(jī)功耗小于75mW\n? 內(nèi)置650V高壓功率管\n? 4ms軟啟動(dòng)用來(lái)減少M(fèi)OSFET上Vds的應(yīng)力\n? 抖頻功能，改善EMI性能\n? 跳頻模式，改善輕載效率，減小待機(jī)功耗\n? 無(wú)噪聲工作\n? 固定65KHz開(kāi)關(guān)頻率\n? 內(nèi)置同步斜坡補(bǔ)償\n? 低啟動(dòng)電流，低工作電流\n? 內(nèi)置前沿消隱(LEB)功能\n? 過(guò)載保護(hù)（OLP），逐周期限流保護(hù)（OCP）\n? VDD過(guò)壓保護(hù)（VDD OVP），欠壓保護(hù)（UVLO），VDD電壓箝位\n? 過(guò)溫保護(hù)（OTP）\n? SOP8無(wú)鉛封裝;

Si-Power

硅動(dòng)力