| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SP6033 | High Performance Synchronous Rectifying Converter DESCRIPTION SP6033 is a high performance and tightly integrated secondary side synchronous rectifying converter for switching mode power supply system. It combines a low Rdson N-channel MOSFET to emulate the traditional diode rectifier at the secondary side of Flyback converter, The fundamental o 文件：557.61 Kbytes 頁(yè)數(shù)：6 Pages | SYNC-POWER 擎力科技 | SYNC-POWER | |
絲?。?strong>SP6033；Package：TO-252-5L；High Performance Synchronous Rectifying Converter DESCRIPTION SP6033 is a high performance and tightly integrated secondary side synchronous rectifying converter for switching mode power supply system. It combines a low Rdson N-channel MOSFET to emulate the traditional diode rectifier at the secondary side of Flyback converter, The fundamental o 文件：557.61 Kbytes 頁(yè)數(shù)：6 Pages | SYNC-POWER 擎力科技 | SYNC-POWER | ||
SP6033 | DC/DC Buck Converter | SiiPower 臺(tái)灣芯派 | SiiPower | |
Product Description [Sirenza] Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an id 文件：264.98 Kbytes 頁(yè)數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
4.9 - 5.9 GHz 3.3V Power Amplifier Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combina 文件：203.55 Kbytes 頁(yè)數(shù)：8 Pages | SIRENZA | SIRENZA | ||
4.9 - 5.9 GHz 3.3V Power Amplifier Product Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combina 文件：203.55 Kbytes 頁(yè)數(shù)：8 Pages | SIRENZA | SIRENZA |
技術(shù)參數(shù)
- Vout(V)：
ADJ
- Iout(A)：
1.8、3.3
- FOSC(kHz)：
52
- Package：
ESOP-8/TO252-5
- Features-1：
Non-Synchronous
- Features-2：
高壓降壓
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ABC |
2447 |
SMD |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ABC |
2023+ |
6.6x7.0x3.5 |
48000 |
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) | ||
ABC/千如 |
22+ |
SMD |
20000 |
公司只有原裝 品質(zhì)保障 |
詢價(jià) | ||
KEXIN/科信 |
23+ |
SMD DIP |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
ABC |
24+ |
SMD |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
Siliup(矽普) |
23+ |
SOP-8 |
3955 |
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET) |
詢價(jià) | ||
NK/南科功率 |
2025+ |
SOP-8L |
99988 |
國(guó)產(chǎn)場(chǎng)效應(yīng)管 |
詢價(jià) | ||
納芯微電子 |
25+ |
3990 |
只做原裝鄙視假貨15118075546 |
詢價(jià) | |||
SIGATEK |
4路分頻器 |
182 |
詢價(jià) |
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