| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/6bct25245/marking.html">6BCT25245；Package：SOIC；25-ohm OCTAL BUS TRANSCEIVER State-of-the-Art BiCMOS Design Significantly Reduces ICCZ Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 Ω or Greater Distributed VCC and GND Pins Minimize Noise Generated by the Simultaneous Switching of Outputs Data Flow-Through Pinout (All Inputs on Opposite S 文件：203.87 Kbytes 頁(yè)數(shù)：8 Pages | TI 德州儀器 | TI | ||
OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 頁(yè)數(shù)：10 Pages | TI 德州儀器 | TI | ||
絲印：6BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 頁(yè)數(shù)：10 Pages | TI 德州儀器 | TI | ||
絲印：6BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 頁(yè)數(shù)：10 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/6bct757/marking.html">6BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package 文件：494.34 Kbytes 頁(yè)數(shù)：10 Pages | TI 德州儀器 | TI | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：70.99 Kbytes 頁(yè)數(shù)：5 Pages | TI 德州儀器 | TI | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：70.99 Kbytes 頁(yè)數(shù)：5 Pages | TI 德州儀器 | TI | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：70.99 Kbytes 頁(yè)數(shù)：5 Pages | TI 德州儀器 | TI | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：80.87 Kbytes 頁(yè)數(shù)：5 Pages | TI 德州儀器 | TI | ||
QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS 文件：654.6 Kbytes 頁(yè)數(shù)：13 Pages | TI 德州儀器 | TI |
技術(shù)參數(shù)
- Supply voltage (Min) (V)：
4.5
- Supply voltage (Max) (V)：
5.5
- Number of channels (#)：
4
- IOL (Max) (mA)：
64
- ICC (Max) (uA)：
49000
- IOH (Max) (mA)：
-15
- Input type：
TTL-Compatible CMOS
- Output type：
3-State
- Features：
Very high speed (tpd 5-10ns)
- Rating：
Catalog
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI |
99+ |
SOP20 |
2360 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
TI |
23+ |
SOP20 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
TI |
05+ |
原廠原裝 |
2051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
TI/BB |
24+ |
SOP-14 |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
TEXASINSTRU |
24+ |
7860 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | |||
TI |
24+ |
SOP-20P |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
TI |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
TI |
25+ |
N/A |
5695 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
24+ |
3000 |
自己現(xiàn)貨 |
詢價(jià) | ||||
TI |
25+ |
SOP |
2000 |
主打產(chǎn)品,長(zhǎng)備大量現(xiàn)貨 |
詢價(jià) |
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