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    首頁
                >絲印反查>SN0048HBX
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    SN0048HBX
    絲?。?strong>SN0048HBX；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers
    
1 Features
? Radiation Performance:
– Radiation-hardness-assurance (RHA) up to
total ionizing dose (TID) of 100krad(Si)
– Single-event latchup (SEL), single-event
burnout (SEB), and single-event gate rupture
(SEGR) immune to linear energy transfer (LET)
= 75MeV-cm2/mg
– Single-event transi
    文件：2.38304 Mbytes 頁數(shù)：47 Pages
    TI
    德州儀器
    

    SN0048HBX
    絲?。?a target="_blank" title="Marking" href="/sn0048hbxeval-only/marking.html">SN0048HBXEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers
    
1 Features
? Radiation Performance:
– Radiation-hardness-assurance (RHA) up to
total ionizing dose (TID) of 100krad(Si)
– Single-event latchup (SEL), single-event
burnout (SEB), and single-event gate rupture
(SEGR) immune to linear energy transfer (LET)
= 75MeV-cm2/mg
– Single-event transi
    文件：2.41584 Mbytes 頁數(shù)：47 Pages
    TI
    德州儀器
    

    SN0048HBX
    絲印：SN0048HBX；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers
    
1 Features
? Radiation Performance:
– Radiation-hardness-assurance (RHA) up to
total ionizing dose (TID) of 100krad(Si)
– Single-event latchup (SEL), single-event
burnout (SEB), and single-event gate rupture
(SEGR) immune to linear energy transfer (LET)
= 75MeV-cm2/mg
– Single-event transi
    文件：2.38304 Mbytes 頁數(shù)：47 Pages
    TI
    德州儀器
    

    SN0048HBX
    絲?。?a target="_blank" title="Marking" href="/sn0048hbxeval-only/marking.html">SN0048HBXEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers
    
1 Features
? Radiation Performance:
– Radiation-hardness-assurance (RHA) up to
total ionizing dose (TID) of 100krad(Si)
– Single-event latchup (SEL), single-event
burnout (SEB), and single-event gate rupture
(SEGR) immune to linear energy transfer (LET)
= 75MeV-cm2/mg
– Single-event transi
    文件：2.41584 Mbytes 頁數(shù)：47 Pages
    TI
    德州儀器
    

    
            
    
		
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



    TI
    		

    25+
    		

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    2447
    		

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    315000
    		

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    TI(德州儀器)
    		

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    20094
    		

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    TI(德州儀器)
    		

    24+/25+
    		

    		

    10000
    		

    原裝正品現(xiàn)貨庫存價優(yōu)
    		
詢價
    

    



    TI
    		

    23+
    		

    TSSOP-28
    		

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    80000
    		

    		
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    TI
    		

    25+
    		

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    20000
    		

    原廠原裝,價格優(yōu)勢
    		
詢價
    

            
    
        
    
        
    更多SN0048HBX供應(yīng)商
            更新時間2026-1-22 14:49:00
        
    
        
    
          
    
            
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