N-Channel MOSFET uses advanced trench technology

文件：1.43705 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

Dual N-Channel Enhancement Mode MOSFET

Sinopower

大中集成電路

250 (6.4) PC QUICK-FIT MALE TABS

文件：503.41 Kbytes 頁數(shù)：1 Pages

KEYSTONE

Keystone Electronics Corp.

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4912 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synch

文件：152.73 Kbytes 頁數(shù)：8 Pages

AOSMD

萬國半導體

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.39101 Mbytes 頁數(shù)：7 Pages

KEXIN

科信電子