3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET AND EXTERNAL COMPENSATION

文件：1.55219 Mbytes 頁數(shù)：46 Pages

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

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NEC

瑞薩

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

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KEXIN

科信電子

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 ? over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

文件：436.59 Kbytes 頁數(shù)：16 Pages

AD

亞德諾

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 ? over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

文件：436.59 Kbytes 頁數(shù)：16 Pages

AD

亞德諾