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                >SKB>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          SKB
          SURFACE MOUNT RECTIFIER
          
FEATURES
● Low profile package
● For surface mounted applications
● High current capability
● Built-in strain relief, ideal for automated placement
● Plastic package has Underwriters Laboratory Flammability Classification 94V-0
● High temperature soldering: 250℃/10 seconds at terminals
          文件：117.42 Kbytes 頁數(shù)：2 Pages
          BILIN
          銀河微電
          

          S3KB
          絲印：SKB；Package：DO-214AA；SURFACE MOUNT RECTIFIER
          
FEATURES
Plastic package has underwriters laboratory
flammability classification 94V-0
For surface mounted applications
Glass passivated chip junction
Built-in strain relief,ideal for automated placement
High temperature soldering:
250oC/10 seconds at terminals
Low profile package
          文件：437.88 Kbytes 頁數(shù)：2 Pages
          SAMYANG
          三陽電子
          

          TPS25200DRVR
          絲?。?strong>SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          TPS25200DRVR.A
          絲印：SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          TPS25200DRVRG4
          絲?。?strong>SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          TPS25200DRVRG4.A
          絲?。?strong>SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          TPS25200DRVT
          絲印：SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          TPS25200DRVT.A
          絲印：SKB；Package：WSON(DRV)；TPS25200 5V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
          
1 Features
? 2.5V to 6.5V operation
? Input withstands up to 20V
? 7.6V input overvoltage shutoff
? 5.25V to 5.55V fixed overvoltage clamp
? 0.6μs overvoltage lockout response
? 3.5μs short circuit response
? Integrated 60mΩ high-side MOSFET
? Up to 2.6A continuous load current
? ±6% 
          文件：4.44123 Mbytes 頁數(shù)：31 Pages
          TI
          德州儀器
          

          SKB02N120
          Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
          
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Allowed number of short circuits: 1s.
? lower Eoff compared to previous generation
? Short circuit withstand time – 10 ?s
? Designed for frequency inverters for 
          文件：615.49 Kbytes 頁數(shù)：13 Pages
          INFINEON
          英飛凌
          

          SKB02N120
          Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
          
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
? 40lower Eoff compared to previous generation
? Short circuit withstand time – 10 μs
? Designed for:
??? - Motor controls
??? - Inverter
??? - SMPS
? NPT-Technology offers:
??? - very tight parameter distributi
          文件：402.05 Kbytes 頁數(shù)：13 Pages
          INFINEON
          英飛凌
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Housing：
            Case G 10b
          • (LLxBBxHH)：
            29x29x10
          • Switches：
            4
          • VRRM / VDRM in V：
            100-1600
          • ID in A：
            17
          • IFSM / ITSM in A：
            320
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          
                
          



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