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          首頁 >SIR>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TLV70215DBVR.B

          絲?。?strong>SIR;Package:SOT-23;TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:892.66 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT

          絲印:SIR;Package:SOT-23;TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:892.66 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT

          絲印:SIR;Package:SOT-23(DBV);TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:902.83 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT.A

          絲?。?strong>SIR;Package:SOT-23(DBV);TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:902.83 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT.A

          絲印:SIR;Package:SOT-23;TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:892.66 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT.B

          絲?。?strong>SIR;Package:SOT-23;TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:892.66 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          TLV70215DBVT.B

          絲?。?strong>SIR;Package:SOT-23(DBV);TLV702 300-mA, Low-IQ, Low-Dropout Regulator

          1 Features 1? Very Low Dropout: – 37 mV at IOUT = 50 mA, VOUT = 2.8 V – 75 mV at IOUT = 100 mA, VOUT = 2.8 V – 220mV at IOUT = 300 mA, VOUT = 2.8 V ? 2% Accuracy ? Low IQ: 35 μA ? Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V ? High PSRR: 68 dB at 1 kHz ? Stable With

          文件:902.83 Kbytes 頁數(shù):37 Pages

          TI

          德州儀器

          SIR104ADP

          N-Channel 100 V (D-S) MOSFET

          FEATURES ? TrenchFET? Gen IV power MOSFET ? Very low RDS x Qg figure-of-merit (FOM) ? Tuned for the lowest RDS x Qoss FOM ? 100 Rg and UIS tested ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS ? Synchronous rectification ? Prim

          文件:221.2 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIR112DP

          N-Channel 40 V (D-S) MOSFET

          FEATURES ? TrenchFET? Gen IV power MOSFET ? 100 Rg and UIS tested ? Qgd/Qgs ratio

          文件:390.98 Kbytes 頁數(shù):13 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIR122LDP

          N-Channel 80 V (D-S) MOSFET

          FEATURES ? TrenchFET? Gen IV power MOSFET ? Very low RDS x Qg figure-of-merit (FOM) ? Tuned for the lowest RDS x Qoss FOM ? 100 Rg and UIS tested ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS ? Synchronous rectification ? Prim

          文件:180.07 Kbytes 頁數(shù):7 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • Package:

            PowerPAK SO-8

          • Ch:

            N

          • VDS (V):

            100

          • VGS (V):

            20

          • RDS(on)@4.5V (?):

            0.0077

          • RDS(on)@10V (?):

            0.0061

          • Qg @4.5V (nC):

            33

          • Qg @10V (nC):

            73

          • Qgs (nC):

            13.8

          • Qgd (nC):

            6.5

          • ID Max. (A):

            81

          • PD Max. (W):

            100

          • VGS(th) Min. (V):

            1

          • Rg Typ. (?):

            0.9

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          更多SIR供應(yīng)商 更新時間2026-1-20 15:30:00
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