<thead id="6dxzi"><s id="6dxzi"></s></thead>

    <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>

      <track id="6dxzi"><b id="6dxzi"></b></track>
    <th id="6dxzi"><input id="6dxzi"></input></th>

    <i id="6dxzi"><nobr id="6dxzi"></nobr></i>

    首頁 >SIHFU9210-E3>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    SIHFU9210-E3

    Power MOSFET

    DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK

    文件:1.5825 Mbytes 頁數:8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    SIHFU9210-E3

    Power MOSFET

    DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

    文件:4.46201 Mbytes 頁數:7 Pages

    KERSEMI

    SIHFU9210-E3

    Power MOSFET

    DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

    文件:4.09862 Mbytes 頁數:7 Pages

    KERSEMI

    SIHFU9210-E3

    Power MOSFET

    DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

    文件:4.45842 Mbytes 頁數:7 Pages

    KERSEMI

    SIHFU9210-E3

    Power MOSFET

    DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DP

    文件:4.09862 Mbytes 頁數:7 Pages

    KERSEMI

    詳細參數

    • 型號:

      SIHFU9210-E3

    • 制造商:

      VISHAY

    • 制造商全稱:

      Vishay Siliconix

    • 功能描述:

      Power MOSFET

    供應商型號品牌批號封裝庫存備注價格
    VISHAY/威世
    23+
    TO-251
    11200
    原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
    詢價
    Vishay
    25+
    TO-251
    12300
    獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
    詢價
    VISHAY/威世
    2022+
    TO-251
    50000
    原廠代理 終端免費提供樣品
    詢價
    VISHAY(威世)
    2447
    TO-251-3
    315000
    3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現貨,
    詢價
    VISHAY(威世)
    2021+
    TO-251-3
    499
    詢價
    VISHAY(威世)
    2022+原裝正品
    TO-251-3
    18000
    支持工廠BOM表配單 公司只做原裝正品貨
    詢價
    VishayVishay
    NEW-
    MOSFETs
    100000
    Trans MOSFET P-CH 200V 3.6A 3-Pin(3+Tab) TO-251AA
    詢價
    VIS
    23+
    TO-251
    10000
    原裝正品,假一罰十
    詢價
    VISHAY
    20+
    TO251
    100
    原裝
    詢價
    VB
    25+
    TO220AB
    10000
    原裝現貨假一罰十
    詢價
    更多SIHFU9210-E3供應商 更新時間2026-1-22 14:25:00

    <thead id="6dxzi"><s id="6dxzi"></s></thead>

      <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>

        <track id="6dxzi"><b id="6dxzi"></b></track>
      <th id="6dxzi"><input id="6dxzi"></input></th>

      <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
      国产精品―色哟呦 | 玩弄孕妇人妻系列 | 在线观看二区 | 国产三级成人综合视频 | 看免费的一级黄色毛片 | 女人18片毛片60分钟视频 | 欧美噜噜噜 | 亚洲国产精品成人综合久 | 青青操青青射 | 走光无码一区二区三区 |