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          首頁 >SIHFU224-E3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SIHFU224-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

          文件:853.71 Kbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIHFU224-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

          文件:3.37075 Mbytes 頁數:7 Pages

          KERSEMI

          SIHFU224-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

          文件:3.37389 Mbytes 頁數:7 Pages

          KERSEMI

          SIHFD224-E3

          Power MOSFET

          VDS (V) 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

          文件:1.11815 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIHFR224-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

          文件:3.37075 Mbytes 頁數:7 Pages

          KERSEMI

          SIHFR224-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

          文件:3.37389 Mbytes 頁數:7 Pages

          KERSEMI

          詳細參數

          • 型號:

            SIHFU224-E3

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            Power MOSFET

          供應商型號品牌批號封裝庫存備注價格
          VISHAY/威世通
          TO-251
          22+
          6000
          十年配單,只做原裝
          詢價
          VISHAY/威世
          22+
          TO-251
          100000
          代理渠道/只做原裝/可含稅
          詢價
          Vishay
          25+
          TO-251
          12300
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          VB
          25+
          TO-251
          10000
          原裝現貨假一罰十
          詢價
          VISHAY/威世
          23+
          TO-251
          11200
          原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          V
          24+
          TO-251
          5000
          只做原裝公司現貨
          詢價
          VIS
          23+
          TO-251
          10000
          原裝正品,假一罰十
          詢價
          更多SIHFU224-E3供應商 更新時間2026-1-21 14:02:00
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