Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.66112 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.66112 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 30 V (D-S) MOSFET

文件：577.21 Kbytes 頁數(shù)：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION

文件：58.99 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：139.85 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科