Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.82938 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.78938 Mbytes 頁數(shù)：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount Schottky Barrier Rectifier

FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definiti

文件：86.98 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definit

文件：130.87 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ultrafast Plastic Rectifier

FEATURES ? Glass passivated chip junction ? Ultrafast reverse recovery time ? Low forward voltage drop ? Low leakage current ? Low switching losses, high efficiency ? High forward surge capability ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Compliant to RoHS directive 2002/95/EC and

文件：72.58 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司