N-Channel 30-V (D-S) MOSFET

FEATURES ? Extremely Low Qgd WFET? Technology for ? ?Low Switching Losses ? Ultra Low Thermal Resistance Using ? ?Top-Exposed PolarPAK? Package for ? ?Double-Sided Cooling ? Leadframe-Based New Encapsulated Package ? ?- Die Not Exposed ? ?- Same Layout Regardless of Die Size ? Low Qgd/Qgs

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VISHAYVishay Siliconix

威世威世科技公司

SiE830DF

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Low Gate Charge QgResults in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available ?

文件：969.36 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.17388 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司