絲?。?strong>SGT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/120r65a/marking.html">120R65A；Package：PowerFLAT；650 V, 75 mΩ typ., 15 A, e-mode PowerGaN transistor

Features ? Enhancement mode normally off transistor ? Very high switching speed ? High power management capability ? Extremely low capacitances ? Kelvin source pad for optimum gate driving ? Zero reverse recovery charge Applications ? Adapters for tablets, notebook and AIO ? USB type-C PD

文件：649.49 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/40n60npfd/marking.html">40N60NPFD；Package：TO-3P；40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

文件：437.8 Kbytes 頁數(shù)：6 Pages

SILAN

士蘭微

絲印：60N60FD1；Package：TO-247-3L；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES ? 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A ? Low conduction loss ? Fast switching ? High input impedance

文件：307.8 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/60n60fd1/marking.html">60N60FD1；Package：TO-3P；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES ? 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A ? Low conduction loss ? Fast switching ? High input impedance

文件：307.8 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/60n60d1/marking.html">60N60D1；Package：TO-247S-3L；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES ? 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A ? Low conduction loss ? Fast switching ? High input impedance

文件：307.8 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/60n60fd1/marking.html">60N60FD1；Package：TO-3PN；60A, 600V FIELD STOP IGBT

DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES ? 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A ? Low conduction loss ? Fast switching ? High input impedance

文件：307.8 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 頁數(shù)：3 Pages

GESS

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 頁數(shù)：3 Pages

GESS

Unidirectional Transient

Features: ■ Clamping voltage - 33V, 60V, or 230V ■ 300A peak transient surge current ■ 130 mA minimum holding current ■ Subnanosecond clamping action ■ Low on-state voltage Applications: ■ Telecommunications equipment ■ Data and voice lines ■ Computer modems ■ Alarm systems

文件：81.83 Kbytes 頁數(shù)：3 Pages

GESS