| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR DESCRIPTION The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection cir 文件：87.57 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR DESCRIPTION The SGSF344 is manufactured using multiepitaxial Mesa Technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is desigined for high speed switching applications such as power supplies and horizontal deflection ci 文件：188.6 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS DESCRIPTION Hollow emitter FASTSWITCH NPN power transistors are specially designed for 220V (and 117V with input doubler) off-line switching power supply applications. 文件：252.59 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The SGSF464 and SGSIF464 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal 文件：88.9 Kbytes 頁(yè)數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS DESCRIPTION Hollow emitter FASTSWITCH NPN power transistors are specially designed for 220V (and 117V with input doubler) off-line switching power supply applications. 文件：252.59 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS DESCRIPTION The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. These transistors are available in ISOWATT220 and ISOWATT218 plastic package respectively. The SGSF se 文件：90.45 Kbytes 頁(yè)數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs a 文件：68.92 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS DESCRIPTION The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. These transistors are available in ISOWATT220 and ISOWATT218 plastic package respectively. The SGSF se 文件：90.45 Kbytes 頁(yè)數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS DESCRIPTION Hollow emitter FASTSWITCH NPN power transistors are specially designed for 220V (and 117V with input doubler) off-line switching power supply applications. 文件：252.59 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The SGSF464 and SGSIF464 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal 文件：88.9 Kbytes 頁(yè)數(shù)：7 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
替換型號(hào)
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl+Di
- 性質(zhì)：
INTEGR.SPEEDUP-DI_低頻或音頻放大 （LF）
- 封裝形式：
直插封裝
- 極限工作電壓：
450V
- 最大電流允許值：
20A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號(hào)：
MJ10004,
- 最大耗散功率：
175W
- 放大倍數(shù)：
β>50
- 圖片代號(hào)：
E-44
- vtest：
450
- htest：
999900
- atest：
20
- wtest：
175
技術(shù)參數(shù)
- Pb-free：
Pb
- Status：
Active
- V(BR)CES Typ (V)：
600
- IC Max (A)：
10
- VCE(sat) Typ (V)：
2.2
- VF Typ (V)：
1.4
- Eoff Typ (mJ)：
0.215
- Eon Typ (mJ)：
0.141
- Trr Typ (ns)：
60
- Irr Typ (A)：
3.5
- Gate Charge Typ (nC)：
30
- Short Circuit Withstand (μs)：
10
- PD Max (W)：
55
- Co-Packaged Diode：
Yes
- Package Type：
TO-220-3 FullPak
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
05+ |
原廠原裝 |
8650 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
FSC |
25+ |
DIP-8 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
仙童 |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
2016+ |
TO3P |
2980 |
公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
FAIRCHILD |
24+ |
TO-247 |
565 |
全新原裝環(huán)保 |
詢價(jià) | ||
ST |
24+ |
TO-3 |
500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
原廠 |
23+ |
TO-220F |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
FAIRCHIL |
24+ |
TO-220 |
6868 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
24+ |
N/A |
2000 |
詢價(jià) | ||||
SGS |
24+ |
QFP48 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) |
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