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          首頁 >SG6>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SG6506

          DIODE ARRAY CIRCUITS

          DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

          文件:64.599 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          SG6507

          DIODE ARRAY CIRCUITS

          DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

          文件:64.599 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          SG6508

          DIODE ARRAY CIRCUITS

          DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

          文件:64.599 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          SG6509

          DIODE ARRAY CIRCUITS

          DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

          文件:64.599 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          SG6509J

          DIODE ARRAY CIRCUITS

          DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

          文件:64.599 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          SG6510

          DIODE ARRAY CIRCUITS

          DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

          文件:34.34 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          SG6510F

          DIODE ARRAY CIRCUITS

          DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

          文件:34.34 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          SG6511

          DIODE ARRAY CIRCUITS

          DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

          文件:34.34 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          SG6511J

          DIODE ARRAY CIRCUITS

          DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

          文件:34.34 Kbytes 頁數(shù):3 Pages

          MICROSEMI

          美高森美

          SG6610WN

          650V 20A Insulated Gate Bipolar Transistor

          Features 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Low Switching Loss 4) Short Circuit Withstand Time 5μs Applications General Inverter UPS Power Conditioner Welding

          文件:1.71644 Mbytes 頁數(shù):5 Pages

          ROHM

          羅姆

          技術(shù)參數(shù)

          • Nom DC Sparkover (V):

            600

          • MAX).\>Max DC Spark over Voltage:

            750

          • Max Impulse Sparkover Voltage @ 100V/us (V):

            1100

          • Max Impulse Breakdown Voltage @ 1kV/us (V):

            1200

          • Insulation Resistance:

            1

          • Capacitance (Co) (pF):

            1

          • Impulse Discharge Current @8/20μs (kA):

            1

          • AC Discharge Current (A):

            2

          • Electrodes:

            2

          • Failsafe:

            No

          • Mounting Method:

            Surface Mount

          • Operating Temperature (deg C):

            -40?C - + 90?C

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          更多SG6供應(yīng)商 更新時(shí)間2026-1-20 17:03:00
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