Surge Protection

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EATON

伊頓

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

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STMICROELECTRONICS

意法半導(dǎo)體

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

文件：272.2 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN Silicon Power Transistors

for high-voltage, high-speed power switching applications.

文件：145.15 Kbytes 頁數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體