Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID = -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

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Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

文件：257.269 Kbytes 頁數(shù)：7 Pages

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Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitances ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current : -10uA (Max.) @ VDS= -200V ? Lower RDS(ON) : 0.383 ? (Typ.)

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Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

文件：263.21 Kbytes 頁數(shù)：7 Pages

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仙童半導體