Dual N-Channel E nhancement Mode Field Effect Transistor

FETURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：571.14 Kbytes 頁(yè)數(shù)：8 Pages

SAMHOP

三合微科

Dual N-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：984.02 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

FETURES\n● Surface Mount Package.\n● Super high dense cell design for low RDS(ON).\n● Rugged and reliable.

Samhop

三合微科

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：351.47 Kbytes 頁(yè)數(shù)：5 Pages

SAMHOP

三合微科

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n● Surface Mount Package.\n● Super high dense cell design for low RDS(ON).\n● Rugged and reliable. ● Surface Mount Package.\n● Super high dense cell design for low RDS(ON).\n● Rugged and reliable.;

Samhop

三合微科