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          首頁 >SD540>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SD540

          TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

          FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

          文件:248.4 Kbytes 頁數(shù):2 Pages

          DCCOM

          道全

          SD5400

          Quad N-Channel Enhancement Mode DMOS Lateral Switches

          Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

          文件:253.43 Kbytes 頁數(shù):1 Pages

          MICROSS

          SD5400

          QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

          Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features ?

          文件:505.48 Kbytes 頁數(shù):3 Pages

          LINEAR

          SD5400

          QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

          QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

          文件:226.84 Kbytes 頁數(shù):4 Pages

          LINEAR

          SD5400

          High-Speed DMOS Quad FET Analog Switch Arrays

          DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

          文件:37.49 Kbytes 頁數(shù):3 Pages

          CALOGIC

          SD5400CY

          High-Speed DMOS Quad FET Analog Switch Arrays

          DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

          文件:37.49 Kbytes 頁數(shù):3 Pages

          CALOGIC

          SD5400CY

          HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

          Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

          文件:357.2 Kbytes 頁數(shù):2 Pages

          LINEAR

          SD5400CY

          QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

          Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features ?

          文件:505.48 Kbytes 頁數(shù):3 Pages

          LINEAR

          SD5400CY

          Quad N-Channel Enhancement Mode DMOS Lateral Switches

          Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

          文件:253.43 Kbytes 頁數(shù):1 Pages

          MICROSS

          SD5400CY_SOIC

          Quad N-Channel Enhancement Mode DMOS Lateral Switches

          Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

          文件:253.43 Kbytes 頁數(shù):1 Pages

          MICROSS

          技術(shù)參數(shù)

          • BVDS (V) Min:

            20

          • ISD (off) (nA) Max:

            10

          • IGBS (μA) Max:

            1

          • VT Min:

            0.1

          • VT Max:

            2

          • RDS (on) (Ohm) Max:

            70

          • Comments:

            DMOS Quad FET

          • Channel:

            N-Channel

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          24+
          SOP-14P
          8
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          SILICONI
          09+
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          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
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          25+
          SOP14
          1836
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          更多SD540供應(yīng)商 更新時(shí)間2026-1-20 15:30:00
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